7-183 ordering information order number / package bv dss /r ds(on) i d(on) bv dgs (max) (min) to-92 80v 4.0 w 1.5a VN0808l VN0808 package options note: see package outline section for dimensions. n-channel enhancement-mode vertical dmos fets advanced dmos technology these enhancement-mode (normally-off) transistors utilize a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. features n n free from secondary breakdown n n low power drive requirement n n ease of paralleling n n low c iss and fast switching speeds n n excellent thermal stability n n integral source-drain diode n n high input impedance and high gain n n complementary n- and p-channel devices applications n n motor controls n n converters n n amplifiers n n switches n n power supply circuits n n drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 30v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. to-92 s g d
7-184 symbol parameter min typ max unit conditions bv dss drain-to-source breakdown voltage 80 v i d = 10 m a, v gs = 0v v gs(th) gate threshold voltage 0.8 2.0 v v gs = v ds , i d = 1ma i gss gate body leakage 100 na v gs = 15v, v ds = 0v i dss zero gate voltage drain current 10 m av gs = 0v, v ds = 80v 500 v gs = 0v, v ds = 0.8 x max rating t a = 125 c i d(on) on-state drain current 1.5 a v gs = 10v, v ds = 10v r ds(on) static drain-to-source on-state resistance 4.0 v gs = 10v, i d = 1a g fs forward transconductance 170 m v ds = 10v, i d = 0.5a c iss input capacitance 50 c oss common source output capacitance 40 pf c rss reverse transfer capacitance 10 t (on) turn-on time 10 t (off) turn-off time 10 v sd diode forward voltage drop 0.85 v i sd = 0.35a, v gs = 0v notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 m s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. VN0808 thermal characteristics electrical characteristics (@ 25 c unless otherwise specified) w ns v dd = 25v, i d = 1a r gen = 25 w v gs = 0v, v ds = 25v f = 1 mhz switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v w package i d (continuous)* i d (pulsed) power dissipation q jc q ja i dr *i drm @ t c = 25 c c/w c/w to-92 0.3a 1.9a 1w 125 170 0.3a 1.9a * i d (continuous) is limited by max rated t j .
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